Title :
A Radiation-Hardened Injection Locked Oscillator Devoted to Radio-Frequency Applications
Author :
Lapuyade, H. ; Pouget, V. ; Bégueret, J.B. ; Hellmuth, P. ; Taris, T. ; Mazouffre, O. ; Fouillat, P. ; Deval, Y.
Author_Institution :
IXL laboratory, CNRS UMR 5818
Abstract :
Implemented in a 0.25 mum SiGe technology, a 5.2 GHz Injection Locked Oscillator (ILO) for Radio-Frequency (RF) applications is shown to be intrinsically radiation-hardened. Design principles and laser-based testing results are presented
Keywords :
germanium compounds; injection locked oscillators; microwave oscillators; radiation hardening (electronics); silicon compounds; 0.25 micron; 5.2 GHz; ILO; SiGe; SiGe technology; design principle; injection locked oscillator; intrinsic radiation-hardening; laser-based testing result; radio-frequency application; Circuit testing; Frequency synchronization; Frequency synthesizers; Germanium silicon alloys; Injection-locked oscillators; Optical design; Phase locked loops; Radio frequency; Silicon germanium; Voltage-controlled oscillators; Injection locked oscillators (ILOs); SiGe technology; radiation hardening; radio frequency (RF); single-event transients (SETs);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.876669
