DocumentCode
1168717
Title
Quantum efficiency and crosstalk of an improved backside-illuminated indium antimonide focal-plane array
Author
Bloom, Ilan ; Nemirovsky, Yael
Author_Institution
Dept. of Electr. Eng., Technion, Israel Inst. of Technol., Haifa, Israel
Volume
38
Issue
8
fYear
1991
fDate
8/1/1991 12:00:00 AM
Firstpage
1792
Lastpage
1796
Abstract
The quantum efficiency and crosstalk of backside-illuminated indium antimonide photodiodes in hybrid focal plane arrays are calculated. An improved structure with crosswise ohmic contacts at the backside of the thinned InSb substrate is described. The simulations predict a significant reduction in the crosstalk while retaining high quantum efficiency
Keywords
III-V semiconductors; image sensors; indium antimonide; infrared imaging; photodiodes; InSb substrate; backside-illuminated; crosstalk; crosswise ohmic contacts; hybrid focal plane arrays; photodiode focal-plane array; quantum efficiency; semiconductors; Crosstalk; Hybrid junctions; Indium; Metallization; Ohmic contacts; Photodiodes; Signal processing; Silicon; Spatial resolution; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.119016
Filename
119016
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