Fabrication and characteristics of GaP-AlGaP tapered waveguide semiconductor Raman amplifiers

Author

Saito, Shigeki ; Kimura, Tomoyuki ; Tanabe, Tadao ; Suto, Ken ; Oyama, Yutaka ; Nishizawa, Jun-ichi

Author_Institution

Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan

Volume

21

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

170

Lastpage

175

Abstract

We have fabricated GaP-AlGaP tapered waveguide semiconductor Raman amplifiers, and analyzed the effect of tapering in pulse-pumped high-gain operation. The finesse measurement and 80-ps pulse pumped Raman amplification experiment were performed. Although the tapering has caused additional optical loss, the highest gain of 23 dB has been obtained for a tapered waveguide with input facet of 6.0 μm² and back facet of 2.9 μm² at averaged input power of 170 mW (peak power 26 W). It is shown that the optical loss of the pump light is more severe than the linear optical loss of the signal light when the gain is higher than 20 dB.

Keywords

III-V semiconductors; Raman lasers; aluminium compounds; gallium compounds; optical communication equipment; optical losses; optical pumping; semiconductor optical amplifiers; waveguide lasers; wavelength division multiplexing; 170 mW; 20 dB; 23 dB; 26 W; 80 ps; GaP-AlGaP; GaP-AlGaP tapered waveguide semiconductor Raman amplifiers; averaged input power; back facet; input facet; linear optical loss; optical loss; pulse pumped Raman amplification experiment; pulse-pumped high-gain operation; pump light; tapered waveguide; Optical device fabrication; Optical losses; Optical pulses; Optical pumping; Optical waveguides; Pulse amplifiers; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Waveguide discontinuities;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2003.808644

Filename

1190162