DocumentCode
11688
Title
Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation
Author
Sarkar, B. ; Ramanan, Narayanan ; Jayanti, Srikant ; Di Spigna, Neil ; Bongmook Lee ; Franzon, P. ; Misra, Vishal
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
35
Issue
1
fYear
2014
fDate
Jan. 2014
Firstpage
48
Lastpage
50
Abstract
Dual floating gate flash memory has been fabricated and characterized to show dynamic operation, non-volatile operation, and simultaneous dynamic and non-volatile operation. The gate stack consists of a thin dielectric separating two floating gates sandwiched between a tunnel dielectric and interpoly dielectric. The quality of the thin dielectric that separates the floating gates is of utmost importance to retain dynamic operation. In this letter, we investigate a dual floating gate memory transistor and show its potential to combine DRAM and flash functionality in the same device.
Keywords
MOSFET; flash memories; random-access storage; DRAM; dual floating gate flash memory; dual floating gate unified memory MOSFET; floating gates; gate stack; interpoly dielectric; nonvolatile operation; simultaneous dynamic; thin dielectric; tunnel dielectric; Ash; Dielectrics; Logic gates; Nonvolatile memory; Random access memory; Transistors; Tunneling; FN tunneling; Flash memory; MOSFET; direct tunneling; dynamic memory; floating gate;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2289751
Filename
6678742
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