• DocumentCode
    11688
  • Title

    Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

  • Author

    Sarkar, B. ; Ramanan, Narayanan ; Jayanti, Srikant ; Di Spigna, Neil ; Bongmook Lee ; Franzon, P. ; Misra, Vishal

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • Volume
    35
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    48
  • Lastpage
    50
  • Abstract
    Dual floating gate flash memory has been fabricated and characterized to show dynamic operation, non-volatile operation, and simultaneous dynamic and non-volatile operation. The gate stack consists of a thin dielectric separating two floating gates sandwiched between a tunnel dielectric and interpoly dielectric. The quality of the thin dielectric that separates the floating gates is of utmost importance to retain dynamic operation. In this letter, we investigate a dual floating gate memory transistor and show its potential to combine DRAM and flash functionality in the same device.
  • Keywords
    MOSFET; flash memories; random-access storage; DRAM; dual floating gate flash memory; dual floating gate unified memory MOSFET; floating gates; gate stack; interpoly dielectric; nonvolatile operation; simultaneous dynamic; thin dielectric; tunnel dielectric; Ash; Dielectrics; Logic gates; Nonvolatile memory; Random access memory; Transistors; Tunneling; FN tunneling; Flash memory; MOSFET; direct tunneling; dynamic memory; floating gate;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2289751
  • Filename
    6678742