Title :
A novel structure of pressure sensors
Author :
Wang, Yaoling ; Zheng, Xinyu ; Liu, Litian ; Li, Zhijian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fDate :
8/1/1991 12:00:00 AM
Abstract :
A structure for discrete and integrated pressure sensors is proposed. A piezoresistive bridge pressure sensor and a pressure-sensitive MOS oscillator on this structure were fabricated and tested. The fully MOS-compatible technology, high-grade performance, intrinsically low temperature coefficient, and feasibility of fabrication are described to show the advantages of the new structure for production of discrete and, in particular, integrated pressure sensors and large-area sensor arrays
Keywords :
electric sensing devices; oscillators; piezoelectric devices; pressure transducers; semiconductor technology; silicon; tactile sensors; discrete pressure sensors; feasibility of fabrication; front side processing technology; fully MOS-compatible technology; integrated pressure sensors; large-area sensor arrays; low temperature coefficient; performance; piezoresistive bridge pressure sensor; pressure-sensitive MOS oscillator; ring oscillators; structure of pressure sensors; Bridges; Costs; Etching; Fabrication; Piezoresistance; Production; Sensor arrays; Sensor phenomena and characterization; Silicon; Wafer bonding;
Journal_Title :
Electron Devices, IEEE Transactions on
