Title :
High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers
Author :
An, D. ; Bok-Hyung Lee ; Byeong-Ok Lim ; Mun-Kyo Lee ; Sung-Chan Kim ; Jung-Hun Oh ; Kim, S.-D. ; Hyung-Moo Park ; Dong-Hoon Shin ; Jin-Koo Rhee
Author_Institution :
Millimeter-wave Innovation Technol. Res. Center, Dongguk Univ., Seoul, South Korea
Abstract :
We report high switching performance of 0.1-μm metamorphic high-electron mobility transistors (HEMTs) for microwave/millimeter-wave monolithic integrated circuit (MMIC) resistive mixer applications. Very low source/drain resistances and gate capacitances, which are 56 and 31% lower than those of conventional pseudomorphic HEMTs, are due to the optimized epitaxial and device structure. Based on these high-performance metamorphic HEMTs, a 94-GHz MMIC resistive mixer was designed and fabricated, and a very low conversion loss of 8.2 dB at a local oscillator power of 7 dBm was obtained. This is the best performing W-band resistive field-effect transistor mixer in terms of conversion loss utilizing GaAs-based HEMTs reported to date.
Keywords :
MMIC; gallium arsenide; high electron mobility transistors; mixers (circuits); switching circuits; 8.2 dB; 94 GHz; GaAs; GaAs-based HEMT; MMIC resistive mixer; W-band resistive field-effect transistor mixer; device structure; drain resistance; gate capacitance; high switching performance; high-electron mobility transistor; local oscillator power; low conversion loss; metamorphic HEMT; microwave/millimeter-wave monolithic integrated circuit; optimized epitaxial; pseudomorphic HEMT; source resistance; Capacitance; HEMTs; MIMICs; MMICs; MODFETs; Microwave devices; PHEMTs; Performance loss; Switching circuits; mHEMTs; Metamorphic high-electron mobility transisitors (HEMTs); microwave/millimeter-wave monolithic integrated circuit (MMIC); resistive mixer; switching performance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.856013
