Title :
Yield and reliability of MNOS EEPROM products
Author :
Kamigaki, Yoshiaki ; Minami, Shin-ichi ; Hagiwara, Takaaki ; Furusawa, Kazunori ; Furuno, Takeshi ; Uchida, Ken ; Terasawa, Masaaki ; Yamazaki, Koubu
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
MNOS electrically erasable and programmable read-only memory (EEPROM) products have been manufactured using 2-μm CMOS fabrication technology, in which MNOS memory devices are composed of a 1.6-nm tunnel SiO2 layer and a 28-nm Si3N4 layer. The Hitachi MNOS EEPROM family consists of a 64-kb EEPROM with static random access memory (SRAM) timing and three EEPROM on-chip microcomputers. Electrical and quality tests establish two basic reliability features: ten-year data retention and 105 erase/write cycle endurance. The MNOS EEPROM family yield has reached the same high level as that of SRAM products fabricated with the same 2-μm CMOS technology. In addition, high-density low-cost MNOS EEPROM products are possible because of the high scalability and high yield attributable to their simple cell structure
Keywords :
CMOS integrated circuits; EPROM; circuit reliability; integrated memory circuits; microprocessor chips; 2 micron; CMOS fabrication technology; EEPROM on-chip microcomputers; Hitachi; MNOS EEPROM products; SRAM timing; Si3N4-SiO2-Si; data retention; electrically erasable; erase/write cycle endurance; high scalability; high yield; microprocessors; programmable read-only memory; reliability; static random access memory; CMOS technology; EPROM; Fabrication; Manufacturing; Microcomputers; PROM; Random access memory; SRAM chips; Testing; Timing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
