Title :
Technical literature [Reprint of "Field-Effect Transistor Memory" (US Patent No. 3,387,286)]
Author :
Dennard, Robert H.
Abstract :
Presents a reproduction of Robert H. Dennard´s ground breaking patent for one-transistor dynamic random access memory (DRAM) that led to major increases in computer memory density and decreases in cost.
Keywords :
FET integrated circuits; History; Patents; Random access memory;
Journal_Title :
Solid-State Circuits Society Newsletter, IEEE
DOI :
10.1109/N-SSC.2008.4785686
