Title :
Transient pulsed analysis on GaN HEMTs at cryogenic temperatures
Author :
Lin, Ching-Hui ; Wang, Wen-Kai ; Lin, Po-Chen ; Lin, Cheng-Kuo ; Chang, Yu-Jung ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
Abstract :
A pulsed measurement of AlGaN/GaN high electron mobility transistors (HEMTs) current-voltage (I-V) output characteristics from 100 to 300 K temperatures has been systematically investigated, and a significant kink is clearly observed, which is more severe at cryogenic temperatures. By comparing the pulsed and dc I-V curves, the kink effect is more significant in the pulsed mode evaluation, which indicates a time constant related mechanism involved in the carrier transport. Moreover, a weak impact ionization by monitoring the gate current in the on-state of device has also been observed, and it is more significant at cryogenic temperatures.
Keywords :
aluminium compounds; cryogenic electronics; gallium compounds; high electron mobility transistors; pulse measurement; wide band gap semiconductors; 100 to 300 K; AlGaN-GaN; GaN HEMT; carrier transport; cryogenic temperature; current-voltage output characteristics; gate current monitoring; high electron mobility transistor; kink effect; pulsed dc I-V curves; pulsed mode measurement; time constant related mechanism; transient pulsed analysis; weak impact ionization; Aluminum gallium nitride; Cryogenics; Current measurement; Gallium nitride; HEMTs; Impact ionization; MODFETs; Pulse measurements; Temperature measurement; Transient analysis; Cryogenic temperatures; GaN high electron mobility transistors (HEMTs); kink effect; pulsed mode measurement;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.856709
