Transient pulsed analysis on GaN HEMTs at cryogenic temperatures

Author

Lin, Ching-Hui ; Wang, Wen-Kai ; Lin, Po-Chen ; Lin, Cheng-Kuo ; Chang, Yu-Jung ; Chan, Yi-Jen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

Volume

26

Issue

10

fYear

2005

Firstpage

710

Lastpage

712

Abstract

A pulsed measurement of AlGaN/GaN high electron mobility transistors (HEMTs) current-voltage (I-V) output characteristics from 100 to 300 K temperatures has been systematically investigated, and a significant kink is clearly observed, which is more severe at cryogenic temperatures. By comparing the pulsed and dc I-V curves, the kink effect is more significant in the pulsed mode evaluation, which indicates a time constant related mechanism involved in the carrier transport. Moreover, a weak impact ionization by monitoring the gate current in the on-state of device has also been observed, and it is more significant at cryogenic temperatures.

Keywords

aluminium compounds; cryogenic electronics; gallium compounds; high electron mobility transistors; pulse measurement; wide band gap semiconductors; 100 to 300 K; AlGaN-GaN; GaN HEMT; carrier transport; cryogenic temperature; current-voltage output characteristics; gate current monitoring; high electron mobility transistor; kink effect; pulsed dc I-V curves; pulsed mode measurement; time constant related mechanism; transient pulsed analysis; weak impact ionization; Aluminum gallium nitride; Cryogenics; Current measurement; Gallium nitride; HEMTs; Impact ionization; MODFETs; Pulse measurements; Temperature measurement; Transient analysis; Cryogenic temperatures; GaN high electron mobility transistors (HEMTs); kink effect; pulsed mode measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.856709

Filename

1510735