DocumentCode :
1168900
Title :
The Role of the Trench Capacitor in DRAM Innovation
Author :
Sunami, Hideo
Author_Institution :
Research Center for Nanodevices and Systems, Hiroshima University, Japan
Volume :
13
Issue :
1
fYear :
2008
Firstpage :
42
Lastpage :
44
Abstract :
Cost has been the strongest driving force for growing the DRAM market. Since die cost is closely related to the number of dies on a wafer, wafer diameter size has continually increased, and memory cell size has been reduced. To cope with the resulting dilemma of cell size vs. capacitance, the author invented the trench capacitor cell. The author documents its implementation, the "soft-error problem" that ensued, and efforts to solve it.
Keywords :
Capacitors; Insulators; Materials; Patents; Random access memory; Silicon; Technological innovation;
fLanguage :
English
Journal_Title :
Solid-State Circuits Society Newsletter, IEEE
Publisher :
ieee
ISSN :
1098-4232
Type :
jour
DOI :
10.1109/N-SSC.2008.4785691
Filename :
4785691
Link To Document :
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