DocumentCode :
1168913
Title :
A GEANT-Based Model for Single Event Upsets in SRAM FPGAs for Use in On-Detector Electronics
Author :
Skutnik, Steve ; Lajoie, John
Author_Institution :
Dept. of Phys. & Astron., Iowa State Univ., Ames, IA
Volume :
53
Issue :
4
fYear :
2006
Firstpage :
2353
Lastpage :
2360
Abstract :
A model is developed to calculate expected Single Event Upset rates in Xilinx\´s line of radiation-hardened field programmable gate array (FPGA) offerings for the radiation environment at the PHENIX experiment on the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. The results of this model are compared to an experiment carried out at PHENIX, where actual upset data was obtained. Specific attention is given to unique features of the model, including major sources of "secondary" radiation flux
Keywords :
SRAM chips; field programmable gate arrays; nuclear electronics; particle detectors; radiation hardening (electronics); Brookhaven National Laboratory; GEANT-based model; PHENIX experiment; Relativistic Heavy Ion Collider; SRAM FPGAs; on-detector electronics; radiation environment; radiation-hardened field programmable gate array; secondary radiation flux; single event upset modeling; Field programmable gate arrays; Gold; Logic design; Logic devices; Neutrons; Protons; Random access memory; Single event transient; Single event upset; Testing; Field programmable gate arrays (FPGA); radiation effects; single event effects; single event upset modeling;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2006.878282
Filename :
1684111
Link To Document :
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