Title :
Very high-density (23 fF/μm2) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric
Author :
Chiang, K.C. ; Lai, C.H. ; Chin, A. ; Wang, T.J. ; Chiu, H.F. ; Jiann-Ruey Chen ; McAlister, S.P. ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A very high density of 23 fF/μm2 has been measured in RF metal-insulator-metal (MIM) capacitors which use high-/spl kappa/ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits.
Keywords :
MIM devices; microwave devices; radiofrequency integrated circuits; tantalum compounds; thin film capacitors; titanium compounds; 100 kHz to 10 GHz; RF MIM capacitors; RF circuits; TaTiO; high-k dielectric; leakage currents; metal-insulator-metal; Capacitance; Crystallization; Dielectric losses; Dielectric measurements; Electrodes; Leakage current; MIM capacitors; Materials science and technology; Radio frequency; Voltage; Capacitor; RF metal–insulator–metal (MIM); TaTiO;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.856708
