Title :
High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications
Author :
Chen, Chi-Wen ; Chang, Ting-Chang ; Liu, Po-Tsun ; Lu, Hau-Yan ; Wang, Kao-Cheng ; Huang, Chen-Shuo ; Ling, Chia-Chun ; Tseng, Tesung-Yuen
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) is developed in this letter. In the bottom gate light-shield a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts of source/drain metal and the sidewall of a-Si:H island edge. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility as high as 1.05 cm2/Vs, due to the enormous improvement in parasitic resistance. The impressively high performance of the proposed a-Si:H TFT provides the potential to apply foractive matrix liquid crystal display and active matrix organic light-emitting diode technology.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; liquid crystal displays; organic light emitting diodes; silicon; thin film transistors; AMLCD; AMOLED; Si:H; TFT; active matrix liquid crystal display; active matrix organic light-emitting diode technology; carrier mobility; hydrogenated amorphous silicon; parasitic contacts; parasitic resistance; phosphorous; semiconductor doping; thin-film transistors; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Amorphous silicon; Leakage current; Lighting; Liquid crystal displays; Organic light emitting diodes; Photoconducting materials; Switches; Thin film transistors; Hydrogenated amorphous silicon (a-Si:H); light-shield; parasitic resistance; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.855405
