DocumentCode :
1168953
Title :
Gamma-Ray Spectroscopy With LaBr _3 :Ce Scintillator Readout by a Silicon Drift Detector
Author :
Fiorini, C. ; Gola, A. ; Zanchi, M. ; Longoni, A. ; Lechner, P. ; Soltau, H. ; Strüder, L.
Author_Institution :
Dipt. di Elettronica a Informazione, Politecnico di Milano
Volume :
53
Issue :
4
fYear :
2006
Firstpage :
2392
Lastpage :
2397
Abstract :
In this paper, the authors propose a gamma-ray spectrometer based on a LaBr3 :Ce scintillator coupled to a silicon drift detector (SDD). The SDD is a photodetector characterized by a very low noise thanks to the low value of output capacitance independent from the active area. With respect to a PMT, the SDD offers a higher quantum efficiency which reduces the spread associated to the statistic of photoelectrons generation. Also with respect to an APD, the SDD offers a lower photoelectrons statistic contribution, which, in the APD, is worsened by the excess noise factor with respect to pure Poisson statistics. Moreover, the SDD has a stable behavior, less sensitive to temperature and bias drift. In the past years, good energy resolutions were measured using a SDD coupled to a CsI:Tl crystal. However, the long shaping time, to be used with this scintillator to prevent ballistic deficit, was too far to exploit the best noise performances achievable with a SDD obtained at shaping times in the order of 1 mus. On the contrary, this optimum shaping time is fully compatible with the short decay time of the LaBr3 :Ce crystal (about 25 ns). The results of the experimental characterization of the LaBr3 :Ce-SDD gamma-ray spectrometer are presented in this work and are compared with the performances achieved with the same crystal coupled to a PMT and to a CsI(Tl) crystal coupled to the same SDD. The SDD has an active area of 30 mm2. Antireflective coatings have been implemented. Good energy resolutions were measured at room temperature, thanks to the low leakage current of the detector: 2.7% at the137 Cs 661.7 KeV line and 6.1% at the 57Co 122 KeV line. A resolution of 5.7% at 122 KeV line was measured at 0 degC
Keywords :
Poisson equation; antireflection coatings; capacitance; gamma-ray spectroscopy; leakage currents; noise; photodetectors; readout electronics; silicon radiation detectors; solid scintillation detectors; APD; CsI:Tl crystal; LaBr3:Ce scintillator readout; PMT; Poisson statistics; antireflective coatings; bias drift; energy resolutions; gamma-ray spectroscopy; leakage current; noise factor; optimum shaping time; output capacitance; photodetector; photoelectron generation; photoelectron statistic contribution; quantum efficiency; room temperature; silicon drift detector; Energy measurement; Energy resolution; Gamma ray detection; Gamma ray detectors; Noise shaping; Photodetectors; Silicon; Spectroscopy; Statistics; Temperature measurement; Gamma-ray spectroscopy; LaBr; silicon drift detectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2006.878274
Filename :
1684116
Link To Document :
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