Title :
A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs
Author :
Chaji, G.R. ; Striakhilev, D. ; Nathan, A.
Author_Institution :
Electr. & Comput. Dept., Univ. of Waterloo, Ont., Canada
Abstract :
This letter presents a novel pixel circuit for hydrogenated amorphous silicon (a-Si:H) active matrix organic light-emitting diode displays employing the short-term stress stability characteristics of a-Si:H thin film transistors (TFTs). The pixel circuit uses a programming TFT that is under stress during the programming cycle and unstressed during the drive cycle. The threshold voltage shift (VT-shift) of the TFT under these conditions is negligible. The programming TFT in turn regulates the current of the drive TFT, and the pixel current therefore becomes independent of the threshold voltage of the drive TFT.
Keywords :
LED displays; circuit stability; thin film transistors; AMOLED pixel circuit; active matrix organic light-emitting diode displays; hydrogenated amorphous silicon; programming TFT; short-term stress stability; thin film transistors; threshold voltage shift; Active matrix organic light emitting diodes; Active matrix technology; Amorphous silicon; Backplanes; Circuit stability; Fabrication; Flat panel displays; Stress; Thin film transistors; Threshold voltage; Hydrogenated amorphous silicon (a-Si:H); active matrix organic light-emitting diode (AMOLED); thin-film transistor (TFT); threshold voltage shift (;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.855421
