DocumentCode :
1168973
Title :
A novel dynamic threshold Voltage MOSFET (DTMOS) using heterostructure channel of Si1-yCy interlayer
Author :
Shieh, Ming-Shan ; Chen, Pang-Shiu ; Tsai, M.-J. ; Lei, T.F.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Volume :
26
Issue :
10
fYear :
2005
Firstpage :
740
Lastpage :
742
Abstract :
We have demonstrated the fabrication of dynamic threshold voltage MOSFET (DTMOS) using the Si1-yCy(y=0.005) incorporation interlayer channel. Compare to conventional Si-DTMOS, the introduction of the Si1-yCy interlayer for this device is realized by super-steep-retrograde (SSR) channel profiles due to the retardation of boron diffusion. A low surface channel impurity with heavily doped substrate can be achieved simultaneously. This novel Si1-yCy channel heterostructure MOSFET exhibits higher transconductance and turn on current.
Keywords :
MOSFET; impurities; semiconductor doping; DTMOS; boron diffusion; dynamic threshold voltage MOSFET; heavily doped substrate; heterostructure channel; low surface channel impurity; super-steep-retrograde channel; Annealing; Boron; Contacts; Doping; Impurities; MOSFET circuits; Silicon; Substrates; Threshold voltage; Transconductance; DTMOS; Si; super-steep-retrograde (SSR) channel;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2005.856011
Filename :
1510745
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1168973
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