Comprehensive heat exchange model for a semiconductor laser diode

Author

Pipe, K.P. ; Ram, R.J.

Author_Institution

Res. Lab. of Electron., MIT, Cambridge, MA, USA

Volume

15

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

504

Lastpage

506

Abstract

By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser´s heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.

Keywords

convection; heat conduction; heat radiation; laser theory; semiconductor device models; semiconductor lasers; thermal stability; comprehensive model; conduction; convection; design strategies; heat exchange model; heat transfer coefficient; nondestructive wafer-scale characterization; optical device; optical devices; quantitative measurements; radiation; semiconductor laser diode; thermal probing; thermal stabilization; total energy flow; Diode lasers; Energy measurement; Fluid flow measurement; Heat transfer; Image motion analysis; Laser modes; Optical design; Optical devices; Performance evaluation; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.809308

Filename

1190184