Title :
Comprehensive heat exchange model for a semiconductor laser diode
Author :
Pipe, K.P. ; Ram, R.J.
Author_Institution :
Res. Lab. of Electron., MIT, Cambridge, MA, USA
fDate :
4/1/2003 12:00:00 AM
Abstract :
By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser´s heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.
Keywords :
convection; heat conduction; heat radiation; laser theory; semiconductor device models; semiconductor lasers; thermal stability; comprehensive model; conduction; convection; design strategies; heat exchange model; heat transfer coefficient; nondestructive wafer-scale characterization; optical device; optical devices; quantitative measurements; radiation; semiconductor laser diode; thermal probing; thermal stabilization; total energy flow; Diode lasers; Energy measurement; Fluid flow measurement; Heat transfer; Image motion analysis; Laser modes; Optical design; Optical devices; Performance evaluation; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.809308
