Accurate effective mobility extraction by split C-V technique in SOI MOSFETs: suppression of the influence of floating-body effects

In this letter, we modify the split capacitance-voltage technique to exclude the influence of floating-body effects on the extracted mobility values and extend its applicability by using the integral of transconductance measured at high frequencies instead of dc drain current values. For the first time it is shown that such procedure allows not only to suppress parasitic gate-induced floating-body effect, which is an inevitable feature of advanced silicon-on-insulator MOSFETs, but also to improve the general accuracy of mobility extraction in moderate-to-strong inversion regime. We demonstrate the advantages of our modified technique over the conventional one by applying it to partially depleted silicon-on-insulator devices from a FinFET process.