Title :
State-space modeling of the PIN photodetector
Author :
Zhang, J.M. ; Conn, David R.
Author_Institution :
Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
fDate :
5/1/1992 12:00:00 AM
Abstract :
A state-space modeling for metal-semiconductor-metal (MSM) or p-intrinsic-n (PIN) photodetectors is developed. This method of analysis gives the time and frequency domain response of the detector for any form of light excitation including end, uniform and exponential illumination. Both the transit time limitation and the device/circuit RC time constant are included in the model. The authors compare the calculations with previously reported analytical results, and good agreement is found
Keywords :
infrared detectors; metal-semiconductor-metal structures; p-i-n diodes; photodetectors; photodiodes; semiconductor device models; PIN photodetector; device/circuit RC time constant; end illumination; exponential illumination; frequency domain response; light excitation; metal-semiconductor-metal; state-space modeling; time domain response; transit time limitation; uniform illumination; Analytical models; Charge carrier processes; Circuit testing; Electron mobility; Frequency domain analysis; Impedance; Lighting; Packaging; Photodetectors; Schottky barriers;
Journal_Title :
Lightwave Technology, Journal of
