Title :
128 line photonic switching system using LiNbO3 switch matrices and semiconductor traveling wave amplifiers
Author :
Burke, Conrad ; Fujiwara, Masahiko ; Yamaguchi, Masayuki ; Nishimoto, Hiroshi ; Honmou, Hiroshi
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
5/1/1992 12:00:00 AM
Abstract :
The possibility of a 128-line photonic space division switching system incorporating LiNbO3 switch matrices and semiconductor traveling wave amplifiers (TWAs) is discussed. System design is considered in terms of the most suitable location for the TWA devices that gives the most practical power margin. Design requirements for a 128-line photonic switching system suitable for a small-sized private branch exchange requirement are presented along with experimental results. It has been shown that a five-stage switch cascade, suitable for such a high-capacity switching system with a power margin of greater than 5 dB in the highest switch loss situation is possible, using low-facet-reflection TWAs. Such TWA devices have been developed in the 1.3-μm wavelength region with maximum fiber-to-fiber gain values of 15 dB. With maximum gain-polarization dependencies of 3 dB, switch losses can be compensated even under TM mode operation
Keywords :
lithium compounds; optical switches; semiconductor junction lasers; switching networks; 1.3 micron; 128 line photonic switching system; 15 dB; 3 dB; LiNbO3 switch matrices; TM mode operation; fiber-to-fiber gain values; five-stage switch cascade; gain-polarization dependencies; high-capacity switching system; low-facet-reflection TWAs; power margin; semiconductor traveling wave amplifiers; small-sized private branch exchange requirement; space division switching system; switch losses; switching network; system design; Laboratories; National electric code; Optical devices; Optical losses; Optical reflection; Semiconductor optical amplifiers; Switches; Switching systems; Symmetric matrices; Telecommunication switching;
Journal_Title :
Lightwave Technology, Journal of