Title :
Electron mobility enhancement using ultrathin pure Ge on Si substrate
Author :
Ching, Chia ; Cho, Byung Jin ; Gao, F. ; Lee, S.J. ; Lee, M.H. ; Yu, C.-Y. ; Liu, C.W. ; Tang, L.J. ; Lee, T.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.
Keywords :
MOSFET; crystal properties; dielectric properties; electron mobility; elemental semiconductors; germanium; silicon; MOSFET; Si wafer; Si-Ge-Si; capping layer; electron mobility enhancement; gate dielectric properties; junction qualities; thin Si crystal layer; ultrathin Ge crystal channel layer; CMOS process; Charge carrier processes; Degradation; Dielectric devices; Dielectric substrates; Electron mobility; MOSFET circuits; Mechanical factors; Raw materials; Silicon; Effective electron mobility; Ge; high-;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.855420
