Impact of hot-carrier degradation on the low-frequency noise in MOSFETs under steady-state and periodic large-signal excitation

Author

Kolhatkar, Jay ; Hoekstra, Eric ; Hof, André ; Salm, Cora ; Schmitz, Jurriaan ; Wallinga, Hans

Author_Institution

Semicond. Components Group, Univ. of Twente, Enschede, Netherlands

Volume

26

Issue

10

fYear

2005

Firstpage

764

Lastpage

766

Abstract

This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.

Keywords

MOSFET; hot carriers; semiconductor device noise; LF noise; MOSFET; hot-carrier degradation; low-frequency noise; periodic large-signal excitation; steady-state large-signal excitation; switched biasing; Acceleration; Degradation; Hot carrier injection; Hot carriers; Low-frequency noise; MOSFETs; Noise measurement; Steady-state; Stress measurement; Substrates; Hot-carrier degradation; MOSFETs; low-frequency noise; periodic large-signal excitation; switched biasing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.856009

Filename

1510753