• DocumentCode
    1169137
  • Title

    Edge effects in narrow-width MOSFET´s

  • Author

    Deen, M. Jamal ; Zuo, Z.P.

  • Author_Institution
    Sch. of Eng., Simon Fraser Univ., Burnaby, BC, Canada
  • Volume
    38
  • Issue
    8
  • fYear
    1991
  • fDate
    8/1/1991 12:00:00 AM
  • Firstpage
    1815
  • Lastpage
    1819
  • Abstract
    New results on edge effects in narrow-width MOSFETs as a function of the gate bias are presented. It was found that the value of the effective channel width, the current through the edge region, and the absolute value of the parasitic parallel conductance all increased with gate bias. These parameters were extracted from the experimental measurements by new techniques, which are described
  • Keywords
    insulated gate field effect transistors; semiconductor device models; edge effects; effective channel width; experimental measurements; gate bias; measurement techniques; narrow-width MOSFETs; parasitic parallel conductance; Councils; Current measurement; Data mining; Doping; Implants; MOS devices; MOSFET circuits; Substrates; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.119020
  • Filename
    119020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1169137