Dynamic degradation in MOSFET´s. I. The physical effects

Author

Brox, Martin ; Weber, Werner

Author_Institution

Siemens AG, Muenchen, Germany

Volume

38

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1852

Lastpage

1858

Abstract

Deviations of dynamic MOS transistor degradation from simple static stresses are addressed from a physical viewpoint. Within this framework, properties of the Si-MOS system introduced by charge migration and trapping in the oxide are discussed along with the dynamics of the oxide/semiconductor interface. Further emphasis is placed on an enhancement of the degradation during alternating injection of electrons and holes, which is traced back to the neutralization of trapped holes by injected electrons and the related electric field modifications

Keywords

insulated gate field effect transistors; reliability; semiconductor device models; semiconductor-insulator boundaries; MOSFETS; Si; Si-SiO₂; alternating injection of electrons and holes; charge migration; charge trapping in oxide; dynamic degradation; electric field modifications; injected electrons; neutralization of trapped holes; physical effects; physical viewpoint; Charge carrier processes; Degradation; Electron mobility; Electron traps; Hot carrier effects; Hot carriers; MOSFET circuits; Pulse measurements; Transient analysis; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.119025

Filename

119025