The Kirk effect in the LIGBT devices

Author

Eranen, S. ; Grönlund, Marko M. ; Blomberg, M. ; Kiihamaki, J.

Author_Institution

Tech. Res. Centre of Finland, Espoo, Finland

Volume

38

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1919

Lastpage

1924

Abstract

A study is made of the DC current-voltage characteristics of several different LIGBT (lateral insulated-gate bipolar transistor) devices both theoretically and experimentally. The theoretical part is based on the analytical expressions and includes some improvements as compared to the earlier circuit simulation models for the LIGBTs. This work extends the range of validity of these models. The fit between the theory and experiments is satisfactory also in the saturated regime of the current-voltage curves. The importance of the Kirk effect is emphasized especially for devices with short distances between the anode and cathode

Keywords

characteristics measurement; insulated gate bipolar transistors; semiconductor device models; DC current-voltage characteristics; Kirk effect; LIGBT devices; current-voltage curves; lateral insulated-gate bipolar transistor; saturated regime; Anodes; Cathodes; Circuit simulation; Current-voltage characteristics; Driver circuits; Electrons; Helium; Insulated gate bipolar transistors; Insulation; Kirk field collapse effect;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.119034

Filename

119034