Title :
Characteristics of narrow-channel polysilicon thin-film transistors
Author :
Yamauchi, Noriyoshi ; Hajjar, J.-J.J. ; Reif, Rafael ; Nakazawa, Kenji ; Tanaka, Keiji
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
8/1/1991 12:00:00 AM
Abstract :
The effect of channel width on the characteristics of polysilicon thin-film transistors (TFTs) was investigated. n-channel TFTs with a channel length L of 20 μm and a channel width W ranging from 20 to 0.5 μm were fabricated and characterized. The most prominent effect of reducing the TFT channel was found to be a drastic decrease in threshold voltage when W was reduced to less than 5 μm. This decrease was found to be correlated with the decrease in grain-boundary trap density
Keywords :
electron traps; elemental semiconductors; silicon; thin film transistors; 0.5 to 20 micron; channel width; grain-boundary trap density; narrow-channel polysilicon thin-film transistors; threshold voltage; Active matrix technology; Annealing; Grain size; Integrated circuit technology; Semiconductor films; Semiconductor thin films; Silicon; Strips; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
