• DocumentCode
    1169676
  • Title

    Electrical characterization of the TiN/Ti/n+Si (and p +Si) interfaces by means of a circular resistor test structure

  • Author

    Caprile, Candida ; Scorzoni, Andrea ; Vanzi, Massimo

  • Author_Institution
    SGS-Thomson Microelectron., Agrate Brianza, Italy
  • Volume
    38
  • Issue
    8
  • fYear
    1991
  • fDate
    8/1/1991 12:00:00 AM
  • Firstpage
    1964
  • Lastpage
    1966
  • Abstract
    A circular geometry based test structure for contact resistance measurements is introduced, together with a compact analytical model for contact resistivity extraction. The circular resistor structure is intended to be used for VLSI contacts that tend to a rounded shape due to lithographic effects. An application to the TiN/Ti/n+Si and TiN/Ti/p+Si interfaces is presented. Good agreement is found with standard models for contact resistivity extraction that rely on cross Kelvin resistor test structures
  • Keywords
    VLSI; contact resistance; elemental semiconductors; metallisation; silicon; titanium; titanium compounds; TiN-Ti-Si; VLSI contacts; analytical model; circular resistor test structure; contact resistance measurements; contact resistivity extraction; cross Kelvin resistor; lithographic effects; Analytical models; Conductivity; Contact resistance; Electrical resistance measurement; Geometry; Resistors; Shape; Testing; Tin; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.119051
  • Filename
    119051
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1169676