DocumentCode
116971
Title
Microplasma breakdown delay spectroscopy of deep level traps in the GaP:N light-emitting diodes
Author
Ionychev, V.K. ; Zinkin, S.D.
fYear
2014
fDate
2-4 Oct. 2014
Firstpage
1
Lastpage
1
Abstract
It was studied microplasma breakdown statistical delay in the green GaP:N light emitting diodes. It was detected unusual strong dependence of deep level traps on the avalanche breakdown statistical delay after changing their charge state with the voltage decreasing on the p-n junction in the temperature range 300-380 K. It was found out four deep level traps and determined their parameters.
Keywords
III-V semiconductors; avalanche breakdown; deep levels; delays; gallium compounds; light emitting diodes; nitrogen; p-n junctions; wide band gap semiconductors; GaP:N; avalanche breakdown; charge state; deep level traps; light-emitting diodes; microplasma breakdown delay spectroscopy; microplasma breakdown statistical delay; p-n junction; temperature 300 K to 380 K; Abstracts; Avalanche breakdown; Breakdown voltage; Delays; Light emitting diodes; Spectroscopy; Laue curve; Microplasma breakdown; deep level trap;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4799-6019-4
Type
conf
DOI
10.1109/APEIE.2014.7040831
Filename
7040831
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