18-GHz 1/8 dynamic frequency divider using Si bipolar technologies

Circuit technology to achieve high-speed frequency dividers using Si bipolar devices is studied. A novel circuit configuration based on regenerative frequency division was proposed and analyzed. It is determined that the 3-dB-down bandwidth of the open loop of the novel circuit configuration is three times higher than that of the conventional circuit and that it operates almost up to the f _T of the transistor. A 1/8 dynamic divider using this novel circuit configuration was fabricated with advanced super self-aligned process technology (SST-1B). The divider operates between 4.6 and 18 GHz. It is noted that the circuit technology and process technology described are applicable to very-high-speed prescalers for satellite communication systems and high-speed measuring equipment