High-sensitivity BiCMOS OEIC for optical storage systems

Author

Kieschnick, Knut ; Zimmermann, Horst

Author_Institution

Chair for Semicond. Electron., Univ. of Kiel, Germany

Volume

38

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

579

Lastpage

584

Abstract

A new BiCMOS optoelectronic integrated circuit (OEIC) for applications in advanced optical storage systems is presented. It is optimized with respect to high sensitivity and high speed. The photodiode and the amplifier are monolithically integrated on the same substrate in a commercial 0.8-μm BiCMOS process. Analytical expressions for the compensation capacitors and for the bandwidth of the OEIC are derived. Neglecting antireflection coating, no process modifications are necessary to produce the integrated photodiodes. A new offset compensation scheme is implemented in the amplifiers to allow for a small chip area and low power consumption. The OEIC shows a sensitivity of 43.3 mV/μW in combination with a -3-dB bandwidth of 60.2 MHz.

Keywords

BiCMOS analogue integrated circuits; compensation; integrated optoelectronics; low-power electronics; optical disc storage; optical receivers; photodiodes; 0.8 micron; 60.2 MHz; BiCMOS; OEIC; bandwidth; chip area; compensation capacitors; integrated photodiodes; offset compensation scheme; optical storage systems; photoreceiver; power consumption; sensitivity; speed; transimpedance amplifier; Application specific integrated circuits; Bandwidth; BiCMOS integrated circuits; High speed optical techniques; Optical amplifiers; Optical sensors; Optoelectronic devices; Photodiodes; Photonic integrated circuits; Stimulated emission;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.809513

Filename

1190593