• DocumentCode
    1170025
  • Title

    Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation

  • Author

    Minagawa, S. ; Kondow, M.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    25
  • Issue
    12
  • fYear
    1989
  • fDate
    6/8/1989 12:00:00 AM
  • Firstpage
    758
  • Lastpage
    759
  • Abstract
    The bandgap of Ga0.5In0.5P grown by metalorganic vapour-phase epitaxy increases as the substrate is inclined away from the
  • Keywords
    III-V semiconductors; aluminium compounds; band structure of crystalline semiconductors and insulators; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor growth; vapour phase epitaxial growth; AlGaInP; bandgap; metalorganic vapour-phase epitaxy; photoluminescence peak energy; saturates; substrate orientation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890512
  • Filename
    31880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1170025