DocumentCode :
1170025
Title :
Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation
Author :
Minagawa, S. ; Kondow, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
25
Issue :
12
fYear :
1989
fDate :
6/8/1989 12:00:00 AM
Firstpage :
758
Lastpage :
759
Abstract :
The bandgap of Ga0.5In0.5P grown by metalorganic vapour-phase epitaxy increases as the substrate is inclined away from the
Keywords :
III-V semiconductors; aluminium compounds; band structure of crystalline semiconductors and insulators; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor growth; vapour phase epitaxial growth; AlGaInP; bandgap; metalorganic vapour-phase epitaxy; photoluminescence peak energy; saturates; substrate orientation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890512
Filename :
31880
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1170025
بازگشت