• DocumentCode
    1170076
  • Title

    Remarkable reduction of threshold current density of 670 nm GaInAsP/AlGaAs visible lasers by increasing Al content of AlGaAs cladding layers

  • Author

    Chong, T.H. ; Kishino, Katsumi

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
  • Volume
    25
  • Issue
    12
  • fYear
    1989
  • fDate
    6/8/1989 12:00:00 AM
  • Firstpage
    761
  • Lastpage
    762
  • Abstract
    Extremely low threshold current density operation of the LPE grown 670 nm GaInAsP/AlGaAs lasers has been realised with drastic improvement of the characteristic temperature of the threshold from 45 K to 90 K by increasing the Al content of the AlGaAs cladding layers from 0.7 to 0.95. The threshold current density was 1.7 kA/cm2, about one-third of the previously reported value of 5-6 kA/cm2.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor junction lasers; 670 nm; 90 K; GaInAsP-AlGaAs; LPE grown; characteristic temperature; cladding layers; threshold current density; visible lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890514
  • Filename
    31882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1170076