Title :
AlGaAs/GaAs multiquantum-well (MQW) surface-emitting laser
Author :
Uenohara, H. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
fDate :
6/8/1989 12:00:00 AM
Abstract :
In the letter the lasing characteristics of a multiquantum-well surface-emitting injection laser with 100 wells at 77 K under pulsed condition is reported. The output light of the device was linearly polarised.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 77 K; AlGaAs-GaAs; injection laser; lasing characteristics; multiquantum-well; output light; pulsed condition; surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890520
