Dynamics of high-voltage pulsed cylindrical sheath

Author

Nikiforov, Sergey A. ; Kim, Guang-Hoon ; Rim, Geun-Hie

Author_Institution

Appl. Electrophys. Res. Group, Korea Electrotechnol. Res. Inst., Changwon, South Korea

Volume

31

Issue

1

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

94

Lastpage

103

Abstract

A semi-analytic model of collisionless sheath in plasma immersion ion implantation (PI³) for a step bias with finite rise time in cylindrical geometry has been developed. The model takes into account the formation of the presheath, predicts the sheath overshooting and its further recovery to the steady-state Child value. To verify the model, a sheath dynamics has been investigated experimentally on a 30-kV PI³ setup using the positively biased Langmuir probe technique. The measurements have been carried out in argon and helium plasmas of inductively coupled and hot cathode plasma sources. The model predictions agreed well with the experimental results.

Keywords

Langmuir probes; plasma immersion ion implantation; plasma sheaths; 30 kV; argon plasmas; collisionless sheath; cylindrical geometry; finite rise time; helium plasmas; high-voltage pulsed cylindrical sheath dynamics; hot cathode plasma sources; inductively coupled plasma sources; plasma immersion ion implantation; plasma measurements; positively biased Langmuir probe technique; presheath formation; semi-analytic model; sheath measurements; sheath overshooting; sheath recovery; steady-state Child value; step bias; Argon; Geometry; Helium; Plasma immersion ion implantation; Plasma measurements; Plasma sources; Predictive models; Probes; Solid modeling; Steady-state;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2003.808870

Filename

1190681