DocumentCode :
1170184
Title :
Dynamics of high-voltage pulsed cylindrical sheath
Author :
Nikiforov, Sergey A. ; Kim, Guang-Hoon ; Rim, Geun-Hie
Author_Institution :
Appl. Electrophys. Res. Group, Korea Electrotechnol. Res. Inst., Changwon, South Korea
Volume :
31
Issue :
1
fYear :
2003
fDate :
2/1/2003 12:00:00 AM
Firstpage :
94
Lastpage :
103
Abstract :
A semi-analytic model of collisionless sheath in plasma immersion ion implantation (PI3) for a step bias with finite rise time in cylindrical geometry has been developed. The model takes into account the formation of the presheath, predicts the sheath overshooting and its further recovery to the steady-state Child value. To verify the model, a sheath dynamics has been investigated experimentally on a 30-kV PI3 setup using the positively biased Langmuir probe technique. The measurements have been carried out in argon and helium plasmas of inductively coupled and hot cathode plasma sources. The model predictions agreed well with the experimental results.
Keywords :
Langmuir probes; plasma immersion ion implantation; plasma sheaths; 30 kV; argon plasmas; collisionless sheath; cylindrical geometry; finite rise time; helium plasmas; high-voltage pulsed cylindrical sheath dynamics; hot cathode plasma sources; inductively coupled plasma sources; plasma immersion ion implantation; plasma measurements; positively biased Langmuir probe technique; presheath formation; semi-analytic model; sheath measurements; sheath overshooting; sheath recovery; steady-state Child value; step bias; Argon; Geometry; Helium; Plasma immersion ion implantation; Plasma measurements; Plasma sources; Predictive models; Probes; Solid modeling; Steady-state;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2003.808870
Filename :
1190681
Link To Document :
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