DocumentCode
1170409
Title
Cryogenic temperature performance of modulation-doped field-effect transistors
Author
Kolodzey, J. ; Laskar, J. ; Boor, S. ; Reis, Sandro ; Ketterson, Andrew ; Adesida, I.
Author_Institution
Illinois Univ., Urbana, IL, USA
Volume
25
Issue
12
fYear
1989
fDate
6/8/1989 12:00:00 AM
Firstpage
777
Lastpage
779
Abstract
Reports S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3 dB higher than at 300 K, and the current gain cutoff frequency fT increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher fT by direct measurement.
Keywords
III-V semiconductors; S-parameters; aluminium compounds; cryogenics; gallium arsenide; high electron mobility transistors; indium compounds; 300 K; 32 GHz; 42 GHz; 80 K; AlInAs-GaInAs-InP; S-parameter measurements; cryogenic temperatures; current gain; cutoff frequency; modulation-doped field-effect transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890525
Filename
31893
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