Characterization of MOS structures based on poly (3,3´´´-dialkyl-quaterthiophene)

Author

Zhao, Ni ; Marinov, Ognian ; Botton, Gianluigi A. ; Deen, M. Jamal ; Ong, Beng S. ; Wu, Y. ; Liu, P.

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of Cambridge, UK

Volume

52

Issue

10

fYear

2005

Firstpage

2150

Lastpage

2156

Abstract

Metal-polymer-oxide-silicon (MPOS) structures with poly(3,3´´´-dialkyl-quaterthiophene) as an active semiconductor layer have been characterized by means of capacitance-voltage (C-V) methods at different ramping rates (dV/dt) for the voltage sweep in the quasi-static capacitance-voltage method (QCV), and at different frequencies (f) for the dynamic or high-frequency method (DCV or HCV). The observed dependency of the capacitance on ramping rate and frequency are explained with a frequency dependent carrier enhancement and a long relaxation time constant in the polymer. The surface modification of gate oxide is found to improve the carrier enhancement in the active polymer layer of MPOS.

Keywords

MIS structures; polymer films; semiconductor thin films; thin film transistors; MOS structures; MPOS; active semiconductor layer; capacitance-voltage methods; carrier enhancement; charge accumulation; charge enhancement; dynamic/high-frequency method; metal-polymer-oxide-silicon structures; poly(3,3´´´-dialkyl-quaterthiophene); polymer field-effect transistors; polymer thin-film transistors; polymer transistors; quasi-static capacitance-voltage method; relaxation time constant; surface modification; voltage sweep; Atomic force microscopy; Capacitance; FETs; Frequency; Materials science and technology; Polymer films; Semiconductivity; Semiconductor films; Surface morphology; Thin film transistors; Capacitance–voltage (C–V) characteristics; charge accumulation; charge enhancement; dynamic capacitance–voltage (C–V); polymer field-effect transistors (FETs); polymer thin-film transistors (TFTs); polymer transistors; quasi-static capacitance–voltage (C–V);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.856172

Filename

1510903