Title :
Self-consistent 2-D Monte Carlo Simulations of InSb APD
Author :
Herbert, D.C. ; Childs, P.A. ; Abram, Richard A. ; Crow, G.C. ; Walmsley, M.
Author_Institution :
Dept. of Electron., Electr. & Comput. Eng., Univ. of Birmingham, UK
Abstract :
Self-consistent Monte Carlo simulations are used to study the low noise and high gain potential of InSb avalanche photodiodes. It is found that for an electron-initiated avalanche, excess noise factors well below the minimum McIntyre value persist up to gain values of around 60 for a 3.2 μm avalanche region. For these very low noise values, it is found that multiplication has a very unusual voltage dependence which may be exploited for highly efficient novel low noise planar arrays operating at low voltage.
Keywords :
III-V semiconductors; Monte Carlo methods; avalanche photodiodes; circuit simulation; indium compounds; semiconductor device noise; InSb; McIntyre value; Monte Carlo simulations; avalanche photodiodes; dead space; detector arrays; electron-initiated avalanche; impact ionization; low noise planar arrays; noise factors; Avalanche photodiodes; Detectors; Electron mobility; Impact ionization; Leakage current; Low voltage; Monte Carlo methods; Photonic band gap; Semiconductor device noise; Temperature; Avalanche photodetector; InSb; Monte Carlo (MC) simulation; dead space; detector arrays; impact ionization; low noise;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.856802
