• DocumentCode
    1170687
  • Title

    Global interconnect width and spacing optimization for latency, bandwidth and power dissipation

  • Author

    Li, Xiao-Chun ; Mao, Jun-Fa ; Huang, Hui-Fen ; Liu, Ye

  • Author_Institution
    Dept. of Electron. Eng., Shanghai Jiao Tong Univ., China
  • Volume
    52
  • Issue
    10
  • fYear
    2005
  • Firstpage
    2272
  • Lastpage
    2279
  • Abstract
    This paper addresses a novel methodology optimizing global interconnect width and spacing for International Technology Roadmap for Semiconductors technology nodes. Global interconnects with and without buffer insertion are considered. The effects of the width and spacing of global interconnects on performance, such as delay, bandwidth, total repeater area and energy dissipation, are analyzed. The product of delay and bandwidth is used as the figure of merit for simultaneous short latency and large bandwidth and the proposed methodology can optimize global interconnects for the maximal figure of merit. It is demonstrated that buffers should not be inserted in global interconnects if interconnect length is shorter than a critical length, which is a constant for a given technology. For global interconnects with buffer insertion, the optimal width and spacing have analytical expressions and are constants for a given technology. For global interconnects without buffer insertion, the optimal width and spacing are dependent on both the technology parameters and interconnect length and can be computed numerically.
  • Keywords
    circuit optimisation; integrated circuit interconnections; integrated circuit modelling; buffer insertion; figure of merit; global interconnect optimization; global interconnect spacing; global interconnect width; interconnect bandwidth; power dissipation; signal delay; Bandwidth; Bit rate; Delay; Optimization methods; Paper technology; Power dissipation; Power system interconnection; Repeaters; System-on-a-chip; Wires; Bandwidth; buffer; delay; global interconnect optimization; width and spacing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2005.856795
  • Filename
    1510919