Title :
Nitride-based light-emitting diodes with p-AlInGaN surface layers
Author :
Kuo, C.H. ; Lin, C.C. ; Chang, S.J. ; Hsu, Y.P. ; Tsai, J.M. ; Lai, W.C. ; Wang, P.T.
Author_Institution :
Inst. of Opt. Sci., Nat. Central Univ., Chung-li, Taiwan
Abstract :
We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAl and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; lattice constants; light emitting diodes; surface roughness; wide band gap semiconductors; AlInGaN; InGaN-GaN; LED; TMAI flow rate; TMIn flow rate; V-shap pits; hexagonal pits; lattice constant; light-emitting diode; metal-organic chemical vapor deposition; p-AlInGaN surface layer; Chemical vapor deposition; Gallium nitride; Light emitting diodes; Optical films; Optical refraction; Optical scattering; Refractive index; Rough surfaces; Surface morphology; Surface roughness; InGaN/GaN; V-shap pits; light-emitting diode (LED); p-AlInGaN;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.856817
