Title :
10GHz GaAs JFET dual-modulus prescalar IC
Author :
Kasahara, J. ; Wada, M. ; Kawasaki, H. ; Hida, Y. ; Okubora, A.
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
fDate :
7/6/1989 12:00:00 AM
Abstract :
A divide-by-256/258 dual-modulus prescalar IC has been successfully fabricated using enhancement-mode GaAs JFETs. The maximum operation frequency of 10.4 GHz is obtained by a 0.5 mu m gate length and buried p-layer JFET technology. The prescalar IC has sufficient operational margin to make it compatible with Si bipolar ECL circuits over a wide frequency range.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; scaling circuits; 0.5 micron; 10 GHz; GaAs; compatible with Si bipolar ECL circuits; dual-modulus prescalar IC; enhancement mode JFETs; operation frequency; operational margin;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890596
