DocumentCode
117088
Title
The main connection circuits of the radiation-hardened differential difference amplifier based on the bipolar and field effect technological process
Author
Prokopenko, N.N. ; Dvornikov, O.V. ; Butyrlagin, N.V. ; Bugakova, A.V.
Author_Institution
Don State Tech. Univ., Rostov-on-Don, Russia
fYear
2014
fDate
2-4 Oct. 2014
Firstpage
29
Lastpage
34
Abstract
The architecture and circuitry of the differential difference amplifier (DDA) with higher radiation hardness (the total dose of radiation is up to 1 millirad, the neutron flux is up to 1013 n/cm2) are reviewed. The fundamental equations are obtained which simplify the parameter determination of the analog and digital interfaces on its basis. The characteristics of the main connection circuits of DDA are examined taking into consideration the effect of the loop gain, transadmittance of the input stages and feedback resistors. It is shown that one circuit of DDA renders possible to provide rather wide set of the identical characteristics without feedback resistors at the inverting and noninverting connections.
Keywords
bipolar integrated circuits; differential amplifiers; field effect integrated circuits; radiation hardening (electronics); analog interfaces; bipolar technological process; differential difference amplifier; digital interfaces; feedback resistors; field effect technological process; input stages; loop gain; main connection circuits; radiation-hardened differential difference amplifier; transadmittance; Adders; Assembly; Barium; Equations; Instruments; Operational amplifiers; Resistors; Radiation hardness; differential difference amplifiers; inverting amplifiers; loop gain; noninverting amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4799-6019-4
Type
conf
DOI
10.1109/APEIE.2014.7040870
Filename
7040870
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