Title :
Injection transistor logic (ITL): new bipolar low-power inverter
Author :
Arshinov, V.I. ; Vecshina, E.V.
Author_Institution :
Inst. of Cybern. Problems, Acad. of Sci., Moscow, USSR
fDate :
7/6/1989 12:00:00 AM
Abstract :
Investigates the characteristics of a new injection transistor logic (ITL) fabricated by vapour-phase epitaxy and ion implantation. The maximum current gain of the Si-ITL-inverter is about 150. The propagation delay tpd was determined by the ring oscillator and maximum frequency method. At a power of 100 mu W per gate for this inverter, tpd is about 500 ps and 850 ps for 60 mu W. In the high-speed ITL structure tpd is about 300 ps for 120 mu W.
Keywords :
bipolar integrated circuits; integrated circuit technology; integrated logic circuits; ion implantation; logic gates; vapour phase epitaxial growth; 60 to 120 muW; 850 to 300 ps; Si; VLSI; bipolar low-power inverter; characteristics; current gain; injection transistor logic; ion implantation; power dissipation; propagation delay; ring oscillator; vapour-phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890602
