DocumentCode
1170921
Title
GaAs/AlGaAs grating surface-emitting diode lasers on Si substrates
Author
Connolly, James ; Dinkel, N. ; Menna, R. ; Andrews, Jeffrey
Author_Institution
David Sarnoff Res. Center, Princeton, NJ, USA
Volume
25
Issue
14
fYear
1989
fDate
7/6/1989 12:00:00 AM
Firstpage
901
Lastpage
902
Abstract
A monolithic grating surface-emitting, GaAs/AlGaAs, separate-confinement-heterostructure, single-quantum-well diode laser has been fabricated on a Si substrate using a single-step metalorganic chemical vapour deposition process. An output power of 30 mW has been obtained under pulsed operation with a peak emission wavelength of 885 nm.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor growth; semiconductor junction lasers; silicon; substrates; vapour phase epitaxial growth; 30 mW; 885 nm; Bragg reflecting grating; DBR laser; GaAs-AlGaAs; OEIC; SCH-SQW LD; Si substrates; distributed Bragg reflection laser; grating surface-emitting diode lasers; metalorganic chemical vapour deposition process; monolithic grating surface-emitting; output power; peak emission wavelength; pulsed operation; semiconductors; separate-confinement-heterostructure; single-quantum-well;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890604
Filename
31927
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