Title :
Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from [100] plane of GaAs substrate
Author :
Tanaka, T. ; Minagawa, S. ; Kawano, T. ; Kajimura, T.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
7/6/1989 12:00:00 AM
Abstract :
The lasing wavelengths of AlGaInP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the [100] plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15 degrees . The influence of the off-angle on the laser transverse mode is also discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 650 nm; AlGaInP semiconductor lasers; GaAs substrate; [100] plane; index guided lasers; laser transverse mode; laser wavelength shortening; lasing wavelengths; off-angle; off-angled substrates; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890607
