Title :
Room-temperature continuous-wave operation of short-wavelength GaInP/AlGaInP laser grown on
Author :
Minagawa, S. ; Tanaka, T. ; Kondow, M.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
7/6/1989 12:00:00 AM
Abstract :
GaInP/AlGaInP gain-guided lasers on
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAs; GaInP-AlGaInP-GaAs; MOVPE; absence of bandgap shrinkage; gain-guided lasers; metalorganic vapour phase epitaxy; properties; red light emission; room-temperature CW operation; short wavelength laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890620
