DocumentCode
1171098
Title
Infrared intraband absorption detectors with etched 35 degrees mesa facets for vertically incident light
Author
Dobbelaere, Wim ; Van Hove, Marleen ; De Raedt, W. ; Deneffe, K. ; De Boeck, Jo ; Mertens, Robert ; Borghs, G.
Author_Institution
Interuniv. Micro-Electron. Center, Leuven, Belgium
Volume
25
Issue
14
fYear
1989
fDate
7/6/1989 12:00:00 AM
Firstpage
929
Lastpage
930
Abstract
Reports for the first time of GaAs/AlGaAs intraband absorption detectors that are able to detect vertically incident long-wavelength infrared light (8 mu m) through etched 35 degrees mesa facets. With 2 V bias voltage the authors obtained responsivities of 0.06 A/W at 77 K and 0.11 A/W at 40 K and dark current densities of 19 pA/ mu m2 at 77 K and 0.24 pA/ mu m2 at 40 K.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; semiconductor technology; 2 V; 40 K; 77 K; 8 micron; GaAs-AlGaAs; MQW; bias voltage; dark current densities; intraband absorption detectors; long-wavelength infrared light; mesa facets; responsivities; vertically incident light;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890623
Filename
31946
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