Title :
High spatial resolution photo-oxidation of a-Si:C:H films at low temperatures
Author :
John, P. ; Qayyum, Amna ; Wilson, John I. B.
Author_Institution :
Dept. of Chem., Heriot-Watt Univ., Edinburgh, UK
fDate :
7/6/1989 12:00:00 AM
Abstract :
Ultraviolet illumination of hydrogenated amorphous silicon-carbon alloys, a-Si:C:H, produces oxide patterns with a resolution better than 5 mu m. Notably, the photoinduced oxidation occurs at temperatures less than 50 degrees C for a-Si:C:H films with a carbon content>30 atomic %. Possible applications include photolithography, apertured membranes, archival optical storage and gate insulators for thin-film transistors.
Keywords :
VLSI; amorphous semiconductors; chemical vapour deposition; dielectric thin films; elemental semiconductors; optical storage; oxidation; photolithography; semiconductor thin films; silicon; 5 micron; 50 C; UV illumination; amorphous Si:C,H films; apertured membranes; applications; archival optical storage; gate insulators; high spatial resolution; low temperatures; oxide patterns; photo oxidation; photoinduced oxidation; photolithography; thin-film transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890624
