Keywords :
III-V semiconductors; X-ray crystallography; X-ray diffraction examination of materials; digital simulation; gallium arsenide; indium compounds; semiconductor superlattices; Abeles´ matrix method; Abeles-Takagi dynamic approach; GaInAs-InP; Takagi-Taupin´s method; calculation of reflectivities; computer simulation; dynamic model; high resolution X-ray diffraction; semiconductor; superlattice periods; superlattice structures; three-crystal X-ray scan;
