Title :
Hot carrier transport effect in Schottky-barrier diode grown by MBE
Author :
Hwang, Chang G. ; Dutton, Robert W.
Author_Institution :
Integrated Circuit Lab., Stanford Univ., CA, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Hot-electron transport effects in Schottky-barrier diodes grown by molecular-beam epitaxy (MBE) were investigated. Comparisons with experimental results for an Al-n+ GaAs diode shows that terminal currents obtained using the Monte Carlo (MC) method agree well with experiment and are higher than those of conventional analysis for the forward-bias condition. A much higher thermionic-emission velocity at the Schottky was obtained using the MC analysis compared to previously published results. It is argued that these hot-electron transport effects should be included when analyzing device physics and current-voltage characteristics of Schottky-barrier diodes grown by MBE
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky-barrier diodes; gallium arsenide; hot carriers; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor-metal boundaries; Al-GaAs; III-V semiconductors; MBE; Monte Carlo method; Schottky-barrier diode; hot carrier transport effect; hot-electron transport effects; molecular-beam epitaxy; semiconductor epitaxial layers; terminal currents; thermionic-emission velocity; Electrons; Gallium arsenide; Hot carriers; Molecular beam epitaxial growth; Monte Carlo methods; Schottky barriers; Schottky diodes; Semiconductor diodes; Thermionic emission; Tunneling;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
