Title :
Three-junction device simulation model
Author :
Brambilla, A. ; Dallago, E.
Author_Institution :
Dept. of Electr. Eng., Pavia Univ., Italy
fDate :
7/6/1989 12:00:00 AM
Abstract :
A numerical model of a three-junction device (pnpn family) is presented. It particularly allows the simulation of the external characteristics of the gate turn-off thyristor (GTO) which is used in electronic power convertors. The model is an extension of the Ebers-Moll model and it is implemented in the SPICE circuit simulator code.
Keywords :
digital simulation; semiconductor device models; thyristors; GTO; SPICE circuit simulator code; device simulation model; external characteristics; gate turn-off thyristor; numerical model; p-n-p-n devices; three-junction device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890628
