DocumentCode
1171143
Title
Three-junction device simulation model
Author
Brambilla, A. ; Dallago, E.
Author_Institution
Dept. of Electr. Eng., Pavia Univ., Italy
Volume
25
Issue
14
fYear
1989
fDate
7/6/1989 12:00:00 AM
Firstpage
936
Lastpage
937
Abstract
A numerical model of a three-junction device (pnpn family) is presented. It particularly allows the simulation of the external characteristics of the gate turn-off thyristor (GTO) which is used in electronic power convertors. The model is an extension of the Ebers-Moll model and it is implemented in the SPICE circuit simulator code.
Keywords
digital simulation; semiconductor device models; thyristors; GTO; SPICE circuit simulator code; device simulation model; external characteristics; gate turn-off thyristor; numerical model; p-n-p-n devices; three-junction device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890628
Filename
31951
Link To Document